The B10G2327N55D from Ampleon is a 2-Stage Asymmetrical Doherty LDMOS FET that operates from 2300 to 2700 MHz. It provides 30 dB of power gain, has a drain efficiency of 35.7%, and an output P1dB of 43.65 W (~46.4 dBm). This transistor is manufactured using Ampleon’s state-of-the-art LDMOS technology and integrates carrier and peaking device, input splitter, output combiner, and pre-match in a single package, resulting in a fully integrated transistor solution. It allows the carrier and peaking bias to be independently controlled and has integrated electrostatic discharge (ESD) protection. The 2-stage FET is available in a thermally enhanced surface-mount package that measures 8.1 x 8.1 x 2.2 mm and is ideal for multi-carrier and multi-standard GSM, WCDMA, and LTE base station applications.
