B11G3338N80D

RF Transistor by Ampleon (326 more products)

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The B11G3338N80D from Ampleon is a 3-Stage Fully Integrated Doherty MMIC that operates from 3300 to 3800 MHz. It provides a power gain of 34 dB with a drain efficiency of more than 18% and has a P1dB of 48.7 dBm. This dual section amplifier has been developed using LDMOS technology and has an integrated carrier and peaking device, input splitter and output combiner, and pre-match in each section. It is available in a PQFN package and is ideal for use as a macrocell base station driver, in microcell base stations, 5G mMIMO, W-CDMA/LTE, active antenna, and general-purpose applications. This multi-band device has integrated ESD protection and is RoHS compliant.

Product Specifications

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Product Details

  • Part Number
    B11G3338N80D
  • Manufacturer
    Ampleon
  • Description
    3-Stage LDMOS Doherty MMIC from 3300 to 3800 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    5G, 3G / WCDMA, 4G / LTE, General Purpose, Base Station, Cellular
  • CW/Pulse
    CW, Pulse
  • Frequency
    3.3 to 3.8 GHz
  • Power
    48 to 49 dBm (P3dB)
  • Power(W)
    63 to 79.4 W (P3dB)
  • P1dB
    75 W
  • Power Gain (Gp)
    31 to 38 dB
  • Input Return Loss
    10 to 15 dB
  • Supply Voltage
    28 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 16 V
  • Current
    210 to 220 mA
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Junction Temperature (Tj)
    200 Degree C
  • Package Type
    Surface Mount
  • Package
    PQFN
  • Dimension
    12 x 7 mm
  • RoHS
    Yes
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C

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