C4H2327N110A

RF Transistor by Ampleon (325 more products)

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The C4H2327N110A from Ampleon is a Doherty Power Transistor that operates from 2300 to 2700 MHz. It has been developed for base stations and multi-carrier applications. This GaN power transistor delivers a pulsed-CW output power of 100 W with 18 dB of gain and an efficiency of 36%. It has low output capacitance that allows it to deliver improved performance for Doherty applications. It is designed for broadband operation and has excellent digital pre-distortion capabilities. The amplifier is available in a surface-mount package that measures 70 x 60 mm and is ideal for base station applications.

Product Specifications

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Product Details

  • Part Number
    C4H2327N110A
  • Manufacturer
    Ampleon
  • Description
    100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    2300 to 2700 MHz
  • Power
    41.5 dBm
  • Power(W)
    14.12 W
  • Power Gain (Gp)
    16 to 18.5 dB
  • Class
    AB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Current
    50 mA
  • Drain Efficiency
    0.57
  • Drain Leakage Current (Id)
    1.74 mA
  • Gate Leakage Current (Ig)
    0.35 mA
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 140 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    P3dB: 100 W

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