The CLL3H0914L-700 from Ampleon is a GaN RF Power Transistor that operates from 0.9 to 1.4 GHz. It delivers an output power of 700 W with a power gain of 17 dB and has a drain efficiency of more than 58%. The transistor is based on GaN-SiC HEMT technology and offers excellent efficiency, thermal resistance, and ruggedness suitable for short and long-pulse applications. It requires a DC supply of 50 V. This transistor is available in a pre-matched ceramic flange package that measures 1.335 x 0.785 x 0.067 inches and is suitable for use in avionics applications.
