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BCG002

RF Transistor by BeRex, Inc. (27 more products)
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The BCG002 from BeRex, Inc. is a RF Transistor with Frequency DC to 26 GHz, Power 33.5 dBm, Power(W) 2 W, Power Gain (Gp) 11 to 12.5 dB, Power Added Effeciency 55%. Tags: Chip. More details for BCG002 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BCG002
  • Manufacturer
    BeRex, Inc.
  • Description
    2 W GaN HEMT from DC to 26 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Commercial, Military
  • Application
    Test & Instrumentation
  • CW/Pulse
    CW
  • Frequency
    DC to 26 GHz
  • Power
    33.5 dBm
  • Power(W)
    2 W
  • Power Gain (Gp)
    11 to 12.5 dB
  • Power Added Effeciency
    55%
  • Supply Voltage
    28 V
  • Breakdown Voltage
    -6.5 V
  • Breakdown Voltage - Drain-Source
    84 V
  • Voltage - Drain-Source (Vdss)
    90 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    265 to 400 mA
  • Power Dissipation (Pdiss)
    4.0 W
  • Thermal Resistance
    10.1 Degree C/W
  • Package Type
    Chip
  • Dimension
    0.15µm x 480µm
  • Grade
    Military, Commercial
  • Storage Temperature
    -60 to 150 Degree C
  • Tags
    BCG Series

Technical Documents
View details on the manufacturer's website
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