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ATF-511P8

RF Transistor by Broadcom (19 more products)
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ATF-511P8 Image

The ATF-511P8 from Broadcom is a RF Transistor with Frequency 0.05 to 6 GHz, Power 30 dBm, Power(W) 1 W, P1dB 30 dBm, Power Gain (Gp) 14.8 dB. Tags: Chip. More details for ATF-511P8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ATF-511P8
  • Manufacturer
    Broadcom
  • Description
    Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC

General Parameters

  • Transistor Type
    E-pHEMT
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, PCS, 3G / WCDMA, WLAN, WLL, RLL, MMDS
  • CW/Pulse
    CW
  • Frequency
    0.05 to 6 GHz
  • Power
    30 dBm
  • Power(W)
    1 W
  • P1dB
    30 dBm
  • Power Gain (Gp)
    14.8 dB
  • Noise Figure
    1.4 dB
  • Transconductance
    2178 mmho
  • Supply Voltage
    4.5 V
  • Threshold Voltage
    0.28 V
  • Voltage - Gate-Source (Vgs)
    0.25 to 0.8 Vdc
  • Drain Bias Current
    200 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    33 °C/W
  • Package Type
    Chip
  • Package
    SMT 2x2
  • Dimension
    2.0 x 2.0 x 0.75 mm
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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