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ATF-531P8

RF Transistor by Broadcom (19 more products)
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ATF-531P8 Image

The ATF-531P8 from Broadcom is a RF Transistor with Frequency 0.05 to 6 GHz, Power 24.5 dBm, Power(W) 0.28 W, P1dB 24.5 dBm, Power Gain (Gp) 20 dB. Tags: Chip. More details for ATF-531P8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ATF-531P8
  • Manufacturer
    Broadcom
  • Description
    Single Voltage E-pHEMT Low Noise 38 dBm OIP3 in LPCC

General Parameters

  • Transistor Type
    E-pHEMT
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, PCS, 3G / WCDMA, WLAN, WLL, RLL, MMDS
  • CW/Pulse
    CW
  • Frequency
    0.05 to 6 GHz
  • Power
    24.5 dBm
  • Power(W)
    0.28 W
  • P1dB
    24.5 dBm
  • Power Gain (Gp)
    20 dB
  • Noise Figure
    0.6 dB
  • Transconductance
    650 mmho
  • Supply Voltage
    4 V
  • Threshold Voltage
    0.3 V
  • Voltage - Gate-Source (Vgs)
    0.68 V
  • Drain Bias Current
    135 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    63 °C/W
  • Package Type
    Chip
  • Package
    SMT 2x2
  • Dimension
    2.0 x 2.0 x 0.75 mm
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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