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The GD300 from Gallium Semiconductor is a RF Transistor with Frequency DC to 2.9 GHz, Saturated Power 300 W, Gain 18 dB, Supply Voltage 50 V, Breakdown Voltage - Drain-Source 150 V. Tags: Die. More details for GD300 can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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