The BFP640F from Infineon is a high linearity, low profile Silicon NPN RF Bipolar Transistor suitable for energy efficient designs up to 8 GHz. This transistor has a transition frequency of 42 GHz and provides an OP1dB of 13.5 dBm (OIP3 of 28 dBm @ 2.4 GHz) with a high gain of 21.5 @ 2.4 GHz and a minimum noise figure of 0.65 dB. It is based on Infineon’s SiGe:C technology and is available in a TSFP-4 package.
This transistor is qualified for industrial applications based on JEDEC47/20/22 tests and is suitable for WLAN and CDMA applications, low noise amplifiers (LNAs) in GNSS receivers, satellite radio (SDARs, DAB) receivers, and multimedia applications such as CATV and FM radio.
