BFP740F

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The BFP740F from Infineon Technologies is a Wideband NPN RF Heterojunction Bipolar Transistor (HBT) with a transition frequency of 45 GHz. It provides an OIP3 of 24 dBm with a gain of 21 dB and a noise figure of 1 dB at 5.5 GHz. This transistor is available in a small form factor leadless surface-mount package and is ideal for wireless communications, satellite communication systems, multimedia, and ISM applications. The BFP740F is qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Product Specifications

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Product Details

  • Part Number
    BFP740F
  • Manufacturer
    Infineon Technologies
  • Description
    RF Heterojunction Bipolar Transistor with 45 GHz Ft

General Parameters

  • Transistor Type
    HBT
  • Technology
    SiGe
  • Application Industry
    SATCOM, GNSS, Broadcast, Wireless Communication
  • Application
    WiMax, WLAN, CATV, FM
  • Frequency
    Up to 75 GHz
  • fT
    75 GHz
  • Power
    6.5 to 8 dBm
  • Power(W)
    0.0045 to 0.0063 W
  • P1dB
    6.5 to 8 dBm
  • OIP3
    22.5 to 24.5 dB
  • Power Gain (Gp)
    14 to 32 dB
  • Noise Figure
    0.4 to 1.5 dB
  • Supply Voltage
    3 V
  • Voltage - Collector Emitter (Vceo)
    4 to 4.7 V
  • Current
    15 mA
  • Lead Free
    Yes
  • Impedance Zl
    50 Ohms
  • Impedance Zs
    50 Ohms
  • Junction Temperature (Tj)
    150 Degree C
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C

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