The BFP840FESD from Infineon is a discrete RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 5 GHz band applications. It has a high transition frequency of 85 GHz and has an RF input power handling capability of up to 20 dBm. The transistor provides an OIP3 of 22 dBm and a gain of 23 dB with a noise figure of 0.75 dB at 5.5 GHz. It is available in a small form factor leadless package and is ideal for use in satellite radios, WiMAX and navigation systems.
