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IB0810M12

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The IB0810M12 from Integra Technologies, Inc. is a RF Transistor with Frequency 870 to 990 MHz, Power 40.79 dBm, Power(W) 11.99 W, Duty_Cycle 0.15, Gain 7.6 dB. Tags: Flanged. More details for IB0810M12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB0810M12
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    870 to 990 MHz, 7.6 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    870 to 990 MHz
  • Power
    40.79 dBm
  • Power(W)
    11.99 W
  • Peak Output Power
    12 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.15
  • Gain
    7.6 dB
  • Power Gain (Gp)
    7 to 9 dB
  • Supply Voltage
    36 V
  • Input Power
    1.5 to 2.4 W
  • Breakdown Voltage
    75 V (Collector Emmiter)
  • Drain Efficiency
    0.45
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -65 to 200 Degree C

Technical Documents
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