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IB1011S190

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The IB1011S190 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 52.79 dBm, Power(W) 190.11 W, Duty_Cycle 0.01, Gain 12.2 dB. Tags: Flanged. More details for IB1011S190 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1011S190
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 to 1090 MHz, 12.2 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    52.79 dBm
  • Power(W)
    190.11 W
  • Peak Output Power
    190 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.01
  • Gain
    12.2 dB
  • Power Gain (Gp)
    12 to 13.5 dB
  • Supply Voltage
    60 V
  • Breakdown Voltage
    65 V (Collector Emmiter)
  • Drain Efficiency
    0.5
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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