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IB2226MH160

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The IB2226MH160 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.25 to 2.55 GHz, Power 52.04 to 53.42 dBm, Power(W) 219.79 W, Duty_Cycle 0.1, Gain 8.5 dB. Tags: Flanged. More details for IB2226MH160 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB2226MH160
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2.25 to 2.55 GHz, Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.25 to 2.55 GHz
  • Power
    52.04 to 53.42 dBm
  • Power(W)
    219.79 W
  • Peak Output Power
    160 W
  • Pulsed Width
    200 us
  • Duty_Cycle
    0.1
  • Gain
    8.5 dB
  • Supply Voltage
    34 V
  • Breakdown Voltage
    65 V (Collector Emmiter)
  • Drain Efficiency
    0.43
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -65 to 200 Degree C

Technical Documents
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