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IB3135MH65

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The IB3135MH65 from Integra Technologies, Inc. is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 38.13 dBm, Power(W) 6.5 W, Duty_Cycle 0.1, Gain 8.2 dB. Tags: Flanged. More details for IB3135MH65 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB3135MH65
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3100 to 3500 MHz, 8.2 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    38.13 dBm
  • Power(W)
    6.5 W
  • Peak Output Power
    65 W
  • Pulsed Width
    150 us
  • Duty_Cycle
    0.1
  • Gain
    8.2 dB
  • Supply Voltage
    36 V
  • Breakdown Voltage
    65 V (Collector Emmiter)
  • Drain Efficiency
    0.42
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 200 Degree C

Technical Documents
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