1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IB3135MH75

IB3135MH75

Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IB3135MH75 Image

The IB3135MH75 from Integra Technologies, Inc. is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 38.75 dBm, Power(W) 7.5 W, Duty_Cycle 0.1, Gain 8.7 dB. Tags: Flanged. More details for IB3135MH75 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IB3135MH75
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3100 to 3500 MHz, 8.7 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    38.75 dBm
  • Power(W)
    7.5 W
  • Peak Output Power
    75 W
  • Pulsed Width
    150 us
  • Duty_Cycle
    0.1
  • Gain
    8.7 dB
  • Supply Voltage
    36 V
  • Breakdown Voltage
    70 V (Collector Emmiter)
  • Drain Efficiency
    0.42
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View similar products