The IGN1011S3600 from Integra Technologies is a GaN-on-SiC RF Power Transistor that operates from 1030 and 1090 MHz. It is based on the new 100 V RF GaN on SiC technology. The transistor delivers an output power of 3600 W with a gain of over 18 dB and an efficiency of more than 65%. It can handle an RF input power of 90 W and requires a DC supply of 100 V. The transistor is housed in a metal-based package with an epoxy-sealed ceramic lid for optimal thermal efficiency. It is ideal for L-band avionics IFF & SSR systems and uplink & downlink transponder applications.
