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IGN2730M65

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The IGN2730M65 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 3 GHz, Power 48.13 to 49.54 dBm, Power(W) 89.95 W, Duty_Cycle 0.2, Gain 14.8 dB. Tags: Flanged. More details for IGN2730M65 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN2730M65
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2.7 to 3 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3 GHz
  • Power
    48.13 to 49.54 dBm
  • Power(W)
    89.95 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.2
  • Gain
    14.8 dB
  • Power Gain (Gp)
    14.15 to 15.56 dB
  • Supply Voltage
    32 V
  • Threshold Voltage
    -2.6 V
  • Input Power
    2.5 W
  • Quiescent Drain Current
    25 to 35 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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