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IGN2731M120

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The IGN2731M120 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 50.79 dBm, Power(W) 119.95 W, Duty_Cycle 0.2, Gain 12.5 dB. Tags: Flanged. More details for IGN2731M120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN2731M120
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2.7 to 3.1 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power
    50.79 dBm
  • Power(W)
    119.95 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Gain
    12.5 dB
  • Power Gain (Gp)
    11.5 to 13.5 dB
  • Supply Voltage
    30 V
  • Threshold Voltage
    -2.6 V
  • Quiescent Drain Current
    100 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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