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CG2H40025

RF Transistor by MACOM (309 more products)
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The CG2H40025 from MACOM is an unmatched, GaN HEMT that provides 25 watts of power from DC to 6 GHz. The transistor has an Efficiency of  62% at PSAT and requires a 28-volt rail voltage. It is available in a 4-lead flange package and is ideal for 2-way private radio, cellular infrastructure and test instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    CG2H40025
  • Manufacturer
    MACOM
  • Description
    25 W GaN HEMT from DC to 6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Test & Measurement
  • Application
    OFDM, 3G / WCDMA, EDGE, CDMA, Cellular, Amplifiers, Test & Instrumentation
  • Frequency
    DC to 6 GHz
  • Power
    40 to 44.77 dBm
  • Power(W)
    20 to 30 W
  • Saturated Power
    20 to 30 W
  • Small Signal Gain
    14 to 15 dB
  • VSWR
    10:1
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Feedback Capacitance
    0.4 pF
  • Input Capacitance
    7.5 pF
  • Junction Temperature (Tj)
    225 Degree C
  • Output Capacitance
    2.4 pF
  • Package Type
    Flanged
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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