The CG2H40120Ffrom MACOM is an unmatched GaN HEMT transistor that operates from DC to 2.5 GHz. It provides a saturated output power of 130 W with a small signal gain of 20 dB @ 1 GHz and a drain efficiency of 70%. This transistor requires a 28 V power supply and is available in a flange or pill package. The transistor can be used in 2-Way Private Radios, Broadband Amplifiers, and for Test Instrumentation applications.
