TheCGH25120F is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 2300 to 2700 MHz and a gain of 13 dB. This Gan Transistor can provide an output power of up to 120 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
