CGH60008D

RF Transistor by MACOM (309 more products)

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CGH60008D Image

The CGH60008D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 6000 MHz and a gain of 15 dB with a supply voltage of 28 V . This Gan Transistor can provide an output power of up to 8 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
    CGH60008D
  • Manufacturer
    MACOM
  • Description
    8 W, 6.0 GHz, GaN HEMT Die

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Wireless Infrastructure, Broadcast
  • Application
    Cellular, 3G / WCDMA, EDGE, CDMA, Radio
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 6 GHz
  • Power
    39.3 dBm
  • Power(W)
    8.51 W
  • Saturated Power
    39.3 dBm
  • Small Signal Gain
    15 dB
  • VSWR
    10.00:1
  • Class
    A, AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
    0.65
  • Drain Current
    60 mA
  • Drain Bias Current
    1.75 to 2.1 A
  • IMD
    -30 dBc
  • Package Type
    Die
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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