The CGHV40320D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates from DC to 4 GHz, provides up to 320 W of saturated power, has a 65 % of PAE and a gain of 19 dB. The transistor requires a supply voltage of 50 V and is available in a form of bare die. It can be used for military, commercial, radar and general purpose applications.
