The CGHV96050F2 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 8400 to 9600 MHz and can provide an output power of up to 50 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
