CGHV96130F

RF Transistor by MACOM (310 more products)

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CGHV96130F Image

The CGHV96130F from MACOM is a GaN on SiC HEMT that operates from 8.4 to 9.6 GHz. It provides a saturated output power of up to 130 W with a power gain of over 7.5 dB and has a PAE of 42%. This Internally Matched GaN HEMT requires a DC supply of 40 V. It is available in a metal/ceramic flanged package for optimal electrical and thermal performance and is ideal for marine radar, weather monitoring, air traffic control, maritime vessel traffic control, and port security applications.

Product Specifications

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Product Details

  • Part Number
    CGHV96130F
  • Manufacturer
    MACOM
  • Description
    130 W GaN HEMT from 8.4 to 9.6 GHz for X-Band Radar Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    Marine Radar, Weather Monitoring, Air Traffic Control, Marine Radar, Port Security
  • CW/Pulse
    Pulse
  • Frequency
    8.4 to 9.6 GHz
  • Power
    51.85 to 52.65 dBm
  • Power(W)
    153 to 184 W (Website says 130 W, datasheet says 153 to 184 W)
  • Pulsed Width
    100 us
  • Duty_Cycle
    10 %
  • Gain
    7.8 to 8.7 dB (Power), 11.8 to 13.8 dB (Linear)
  • Power Added Effeciency
    33 to 39 %
  • Input Return Loss
    5.4 to 5.6 dB
  • VSWR
    5:1
  • Supply Voltage
    40 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Input Power
    44 dBm
  • Breakdown Voltage - Drain-Source
    100 V
  • Current
    1 A
  • Drain Current
    21 to 26 A
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    4-Hole Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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