The GTRA214602FC from MACOM is a GaN on SiC High Electron Mobility Transistor (HEMT) that operates from 2.11 to 2.17 GHz. It delivers an output power of 490 W (P3dB) with a gain of 14.4 dB and has an efficiency of 59%. The transistor supports typical pulsed CW performance with a pulse width of 16 µs and a duty cycle of 10%.This GaN on SiC HEMT requires a supply voltage of 48 V and draws 150 mA of current. This RoHS-compliant amplifier is available in a thermally enhanced package with an earless flange and is designed for multi-standard cellular power amplification.
