The GTVA262701FA from MACOM is a GaN on SiC High Electron Mobility Transistor that operates from 2620 to 2690 MHz. It provides an output power of 270 W with a gain of 18.1 dB and an efficiency of 66%, while operating from 48 V supply. This Pulsed / CW device has a pulse width of 10 µs and a duty cycle of 10%. It is available in a surface-mount package with earless flange and is ideal for use in multi-standard cellular power amplifier applications. This HEMT is ideal for Wireless Infrastructure applications and is capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power.
