The GTVA311801FA-V1 from MACOM is a GaN on SiC High Electron Mobility Transistor that operates from 2700 to 3100 MHz. It provides an output power of 180 W and a gain of 15 dB while operating from 50 V supply. This Pulsed CW device has a pulse width of 300 µs and a duty cycle of 10%. It is available in a thermally-enhanced surface mount package with earless flange.