GTVA311801FA-V1

RF Transistor by MACOM (310 more products)

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The GTVA311801FA-V1 from MACOM is a GaN on SiC High Electron Mobility Transistor that operates from 2700 to 3100 MHz. It provides an output power of 180 W and a gain of 15 dB while operating from 50 V supply. This Pulsed CW device has a pulse width of 300 µs and a duty cycle of 10%. It is available in a thermally-enhanced surface mount package with earless flange.

Product Specifications

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Product Details

  • Part Number
    GTVA311801FA-V1
  • Manufacturer
    MACOM
  • Description
    180 W GaN on SiC HEMT from 2700 to 3100 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    2700 to 3100 MHz
  • Power
    52.55 dBm
  • Power(W)
    180 W
  • Gain
    15 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    70 %
  • Package Type
    Earless Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degrees C

Technical Documents