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The GTVA311801FA-V1 from MACOM is a GaN on SiC High Electron Mobility Transistor that operates from 2700 to 3100 MHz. It provides an output power of 180 W and a gain of 15 dB while operating from 50 V supply. This Pulsed CW device has a pulse width of 300 µs and a duty cycle of 10%. It is available in a thermally-enhanced surface mount package with earless flange.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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