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MATR-GSHC03-160150

RF Transistor by MACOM (309 more products)
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The MATR-GSHC03-160150 from MACOM is a RF Transistor with Frequency DC to 3.5 GHz, Power 46.53 dBm, Power(W) 44.98 W, Saturated Power 47.3 dBm, Gain 12 dB. Tags: Die. More details for MATR-GSHC03-160150 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MATR-GSHC03-160150
  • Manufacturer
    MACOM
  • Description
    DC to 3.5 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si, GaN
  • Application Industry
    ISM, Wireless Infrastructure, Aerospace & Defence, Radar, Broadcast, Avionics
  • Application
    Mobile Radio, Communication System, ISM Band, L Band, S Band, Military, Radar
  • CW/Pulse
    CW
  • Frequency
    DC to 3.5 GHz
  • Power
    46.53 dBm
  • Power(W)
    44.98 W
  • Saturated Power
    47.3 dBm
  • Gain
    12 dB
  • Small Signal Gain
    13.5 dB
  • Power Gain (Gp)
    12 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.3 to -0.7 V
  • Drain Efficiency
    0.54
  • Package Type
    Die
  • RoHS
    Yes

Technical Documents
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