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NPT25100B

RF Transistor by MACOM (309 more products)
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The NPT25100B from MACOM is a RF Transistor with Frequency 2.1 to 2.7 GHz, Power 49.54 dBm, Power(W) 89.95 W, Gain 16 dB, Small Signal Gain 14 to 16.5 dB. Tags: Flanged. More details for NPT25100B can be seen below.

Product Specifications

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Product Details

  • Part Number
    NPT25100B
  • Manufacturer
    MACOM
  • Description
    2.1 to 2.7 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMAX, 3G / WCDMA, 4G / LTE, WiMAX, 3G / WCDMA, 4G / LTE
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.1 to 2.7 GHz
  • Power
    49.54 dBm
  • Power(W)
    89.95 W
  • Peak Output Power
    125 W (Peak envelop power P3dB)
  • Gain
    16 dB
  • Small Signal Gain
    14 to 16.5 dB
  • Power Gain (Gp)
    16.5 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.3 to -1.3 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Package Type
    Flanged
  • Package
    Flange Ceramic
  • RoHS
    Yes

Technical Documents
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