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The 1011GN-1200V from Microchip Technology is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 60.79 dBm, Power(W) 1199.5 W, Duty_Cycle 0.02, Power Gain (Gp) 18.5 to 20 dB. Tags: Flanged. More details for 1011GN-1200V can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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