The A5G23H110N from NXP Semiconductors is an Airfast® Doherty RF Power Transistor that operates from 2300 to 2400 MHz. It delivers an output power of 13.8 W with a power gain of 16 dB and has an efficiency of 56.5%. The transistor is based on GaN technology and is designed for low-complexity analog or digital linearization systems and is optimized for massive MIMO active antenna systems for 5G base stations. It has a high terminal impedance and is able to withstand extremely high output VSWR for optimal broadband performance. This transistor is available in a 6-pin DFN package that measures 7.0 x 6.5 mm and requires a DC supply of 48 V.
