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EGN21C160I2D

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EGN21C160I2D Image

The EGN21C160I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.14 GHz, Power 49.5 dBm, Power(W) 89.13 W, Saturated Power 51.7 to 52.5 dBm, Power Gain (Gp) 17 to 18 dB. Tags: Flanged. More details for EGN21C160I2D can be seen below.

Product Specifications

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Product Details

  • Part Number
    EGN21C160I2D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 2.14 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band
  • Application
    Base Station, 4G / LTE
  • Frequency
    2.14 GHz
  • Power
    49.5 dBm
  • Power(W)
    89.13 W
  • Saturated Power
    51.7 to 52.5 dBm
  • Power Gain (Gp)
    17 to 18 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    132 W
  • IMD
    -32 to -28 dBc
  • Thermal Resistance
    1.4 to 1.6 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 153 mA, Reverse Gate Current : -5.8 mA

Technical Documents
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