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1214GN-180LV

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The 1214GN-180LV from Microchip Technology is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 52.55 dBm, Power(W) 179.89 W, Duty_Cycle 0.3, Power Gain (Gp) 16.6 to 17 dB. Tags: Die. More details for 1214GN-180LV can be seen below.

Product Specifications

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Product Details

  • Part Number
    1214GN-180LV
  • Manufacturer
    Microchip Technology
  • Description
    180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    Amplifiers, L Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    1.2 to 1.4 GHz
  • Power
    52.55 dBm
  • Power(W)
    179.89 W
  • Pulsed Power
    180 W
  • Pulsed Width
    3 mS
  • Duty_Cycle
    0.3
  • Power Gain (Gp)
    16.6 to 17 dB
  • VSWR
    3.00:1
  • Class
    AB
  • Supply Voltage
    50 V
  • Drain Bias Current
    12 mA
  • Thermal Resistance
    0.73 C/W
  • Package Type
    Die
  • Package
    55-KR
  • RoHS
    Yes
  • Operating Temperature
    250 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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