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MGF4935AM

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The MGF4935AM from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 12 GHz, Gain 11 to 12 dB, Noise Figure 0.45 to 0.65 dB, Supply Voltage 2 V, Operating Temperature -55 to 125 Degree C. Tags: Flanged. More details for MGF4935AM can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGF4935AM
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 12 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    InGaAs
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    Ku Band, S Band
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • Gain
    11 to 12 dB
  • Noise Figure
    0.45 to 0.65 dB
  • Supply Voltage
    2 V
  • Breakdown Voltage
    -3.5 V (Gate Drain)
  • Drain Bias Current
    10 mA
  • Quiescent Drain Current
    10000 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -55 to 125 Degree C
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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