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MGFC50G5867A

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The MGFC50G5867A from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 5.8 to 6.7 GHz, Power 50 dBm, Power(W) 100 W, Power Gain (Gp) 9 to 10 dB, Supply Voltage 40 V. Tags: Flanged. More details for MGFC50G5867A can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGFC50G5867A
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    5.8 to 6.7 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM
  • Application
    C Band
  • CW/Pulse
    CW
  • Frequency
    5.8 to 6.7 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Power Gain (Gp)
    9 to 10 dB
  • Polarity
    N-channel
  • Supply Voltage
    40 V
  • Input Power
    25.11 W
  • Drain Bias Current
    1920 mA
  • Quiescent Drain Current
    190 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C

Technical Documents
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