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MGFG5H1503

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The MGFG5H1503 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 43.01 dBm, Power(W) 20 W, Saturated Power 41 to 43 dBm, Power Gain (Gp) 18 to 20 dB. Tags: Flanged. More details for MGFG5H1503 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGFG5H1503
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    13.75 to 14.5 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM
  • Application
    Ku Band
  • CW/Pulse
    CW
  • Frequency
    13.75 to 14.5 GHz
  • Power
    43.01 dBm
  • Power(W)
    20 W
  • Saturated Power
    41 to 43 dBm
  • Power Gain (Gp)
    18 to 20 dB
  • Supply Voltage
    24 V
  • Voltage - Gate-Source (Vgs)
    -2.7 to -1.7 V
  • Drain Bias Current
    2700 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
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