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RD01MUS2B

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The RD01MUS2B from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 527 MHz, Power 30 to 32.04 dBm, Power(W) 1.6 W, Gain 15 dB, Supply Voltage 7.2 V. Tags: Flanged. More details for RD01MUS2B can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD01MUS2B
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 527 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    DC to 527 MHz
  • Power
    30 to 32.04 dBm
  • Power(W)
    1.6 W
  • Gain
    15 dB
  • Supply Voltage
    7.2 V
  • Threshold Voltage
    0.5 to 1.5 V
  • Input Power
    0.03 W
  • Drain Bias Current
    0.05 mA
  • Quiescent Drain Current
    40 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents
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