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RD08MUS2

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The RD08MUS2 from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 527 MHz, Power 38.75 to 39.29 dBm, Power(W) 8.49 W, Supply Voltage 7.2 V, Input Power 0.2 W. Tags: Flanged. More details for RD08MUS2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RD08MUS2
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 527 MHz, MOSFET Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast
  • Application
    Mobile, Radio
  • CW/Pulse
    CW
  • Frequency
    DC to 527 MHz
  • Power
    38.75 to 39.29 dBm
  • Power(W)
    8.49 W
  • Supply Voltage
    7.2 V
  • Threshold Voltage
    0.5 to 1.5 V
  • Input Power
    0.2 W
  • Drain Bias Current
    0.05 mA
  • Quiescent Drain Current
    280 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents
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