The A2V07H400-04N from NXP Semiconductors is an Airfast® LDMOS Doherty Power Transistor that operates from 420 to 851 MHz. It delivers an output power of 107 W with a gain of up to 19.9 dB and has an efficiency of more than 53%. The transistor is designed for digital pre-distortion error correction systems and has a greater negative gate-source voltage range for improved Class C operation. It is available in a surface-mount OM-780-4L package and requires a DC supply of 48 V. The transistor is suitable for use in cellular base station applications.

Product Specifications

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Product Details

  • Part Number
    A2V07H400-04N
  • Manufacturer
    NXP Semiconductors
  • Description
    107 W LDMOS Power Transistor from 420 to 851 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular
  • Frequency
    420 to 692 MHz
  • Power
    57.3 dBm (3dB)
  • Power(W)
    537 W (3dB)
  • P1dB
    53.7 to 54.3 dB
  • Power Gain (Gp)
    18.9 to 21.9 dB
  • VSWR
    10.00:1
  • Supply Voltage
    0 to 55 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Voltage - Drain-Source (Vdss)
    -0.5 to 105 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Leakage Current (Id)
    1 to 10 uAdc
  • Gate Leakage Current (Ig)
    1 uAdc
  • Junction Temperature (Tj)
    -40 to 225 Degree C
  • Package Type
    Flanged
  • Grade
    Commercial
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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