The A3T18H400W23S from NXP is an asymmetrical Doherty RF power LDMOS transistor that operates from 1805 to 1880 MHz. It delivers an output power of 71 W and a gain of 17.1 dB with Doherty efficiency up to 53.4 percent. The device requires a supply voltage of 28 VDC while consuming up to 300 mA of current. The transistor is available in an ACP-1230S-4L2S package and is designed for cellular base station applications requiring very wide instantaneous bandwidth capabilities.
