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AFT21H350W04GSR6

The AFT21H350W04GSR6 from NXP Semiconductors is a RF Transistor with Frequency 2110 to 2170 MHz, Power 47.99 dBm, Power(W) 63 W, P1dB 100 W, Duty_Cycle 0.1. Tags: Chip. More details for AFT21H350W04GSR6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    AFT21H350W04GSR6
  • Manufacturer
    NXP Semiconductors
  • Description
    N--Channel Enhancement--Mode Lateral MOSFETs

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application Type
    WCDMA
  • Application
    Base Station, Cellular
  • CW/Pulse
    Pulse, CW
  • Frequency
    2110 to 2170 MHz
  • Power
    47.99 dBm
  • Power(W)
    63 W
  • CW Power
    110 to 195 W
  • P1dB
    100 W
  • Duty_Cycle
    0.1
  • Gain
    16.4 to 16.5 dB
  • Power Gain (Gp)
    15.5 to 18.5 dB
  • VSWR
    10.00:1
  • Class
    Class C
  • Supply Voltage
    48 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Drain-Source (Vdss)
    0.1 to 0.3 Vdc
  • Voltage - Gate-Source (Vgs)
    0.8 to 1.6 Vdc
  • Drain Leakage Current (Id)
    5 to 10 Adc
  • Quiescent Drain Current
    750 mA
  • Gate Leakage Current (Ig)
    1 uAdc
  • IMD
    140 MHz
  • Junction Temperature (Tj)
    -55 to 225 Degree C
  • Thermal Resistance
    0.49 DegreeC/W
  • Package Type
    Chip
  • RoHS
    Yes
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    P3dB : 400 W

Technical Documents
View details on the manufacturer's website
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