The MHT1002GN from NXP is a RF Power LDMOS Transistor that operates from 902 to 928 MHz. This transistor has been developed for use in consumer and commercial cooking applications. It provides up to 350 watts of CW power with a gain of over 20.1 dB and has a PAE of 66.9% at 915 MHz. This device requires a 48 V supply and is internally matched to 50 ohms. The transistor has an operating temperature rating of 150 C and die temperature rating of 225 C. The RoHS complaint transistor also has integrated ESD protection.