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  6. MMRF1011H

The MMRF1011H from NXP Semiconductors is a RF Transistor with Frequency 1.2 to 1.4 GHz, Power 45.98 to 45.98 dBm, Power(W) 39.63 W, P1dB 55.2 dBm, Duty_Cycle 0.12. Tags: Flanged. More details for MMRF1011H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1011H
  • Manufacturer
    NXP Semiconductors
  • Description
    Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    L Band, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.2 to 1.4 GHz
  • Power
    45.98 to 45.98 dBm
  • Power(W)
    39.63 W
  • P1dB
    55.2 dBm
  • Peak Output Power
    1000 W
  • Pulsed Power
    330 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.12
  • Power Gain (Gp)
    16.5 to 19.5 dB
  • Input Return Loss
    -12 to -9 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.9 to 2.4 Vdc
  • Breakdown Voltage - Drain-Source
    100 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.605
  • Drain Current
    150 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.13 °C/W
  • Package Type
    Flanged
  • Package
    NI--780H--2L
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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