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QPD1019

RF Transistor by Qorvo (103 more products)
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QPD1019 Image

The QPD1019 from Qorvo is a RF Transistor with Frequency 2.9 to 3.3 GHz, Power 56.99 dBm, Power(W) 500.03 W, Saturated Power 57.7 dBm, Duty_Cycle 0.1. Tags: Surface Mount. More details for QPD1019 can be seen below.

Product Specifications

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Product Details

  • Part Number
    QPD1019
  • Manufacturer
    Qorvo
  • Description
    2.9 to 3.3 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Aerospace & Defence, Test & Measurement, Wireless Infrastructure
  • Application
    Military, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.9 to 3.3 GHz
  • Power
    56.99 dBm
  • Power(W)
    500.03 W
  • Saturated Power
    57.7 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    15.5 dB
  • Supply Voltage
    28 to 55 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Bias Current
    750 mA
  • Quiescent Drain Current
    750 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Surface Mount
  • RoHS
    Yes

Technical Documents
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