The H001C11A from RFHIC is a Power Transistor that operates from 1880 to 2025 MHz. It delivers a saturated output power of 195 W with a gain of 16 dB and a drain efficiency of 48%. This asymmetrical Doherty HEMT is based on GaN technology, requires a DC supply of 48 V and consumes less than 4.5 A of drain current. It is available in a surface-mount package that measures 14.90 x 10.16 mm and is suitable for use in WiMAX, LTE, WCDMA, GSM, multi-band, multi-mode, multi-carrier, high-efficiency and Doherty amplifier applications.
