The ID18275WD from RFHIC is an Asymmetrical Doherty GaN-on-SiC High Electron Mobility Transistor (HEMT) that operates from 1805-1880 MHz. It delivers a saturated output power of 331 W with a gain of 13.8 dB and has an efficiency of 56%. The transistor is internally matched to 50 ohms for improved efficiency and reliability. It requires a DC supply of 48 V. This RoHS-compliant HEMT is available in a flange mount package that measures 0.597 x 0.432 inches and is ideal for multi-carrier, multi-band, multi-mode, Wi-MAX, LTE, and WCDMA applications.
