The ID19801D from RFHIC is a GaN Power Transistor that operates from 1930 to 1995 MHz. It delivers a saturated output power of 809.1 W and a gain of 16 dB with a drain efficiency of up to 54.2%. This asymmetrical Doherty GaN HEMT transistor has an ACLR of up to -30.8 dBc and LTE linearity of -27.0 dBc. It requires a DC supply of 150 V and consumes less than 64.8 A of current. This transistor is available in a flange package that measures 24.60 x 14.84 x 3.80 mm and is ideal for WiMAX, LTE, WCDMA, GSM, multi-band/multi-mode, multi-carrier, high efficiency and Doherty amplifier applications.
