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FLC057WG

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The FLC057WG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 25.5 to 27 dBm, Power(W) 0.35 to 0.5 W, P1dB 25.5 to 27 dBm, Power Gain (Gp) 8 to 9 dB. Tags: Flanged. More details for FLC057WG can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLC057WG
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 8 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    C-Band, General Purpose
  • Application
    General Purpose
  • Frequency
    8 GHz
  • Power
    25.5 to 27 dBm
  • Power(W)
    0.35 to 0.5 W
  • P1dB
    25.5 to 27 dBm
  • Power Gain (Gp)
    8 to 9 dB
  • Power Added Effeciency
    0.38
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    200 to 300 mA
  • Thermal Resistance
    27 to 40 Degree C/W
  • Package Type
    Flanged
  • Package
    WG
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
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